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NTB6411AN, NTP6411AN N-Channel Power MOSFET 100 V, 72 A, 14 mW
Features
* * * *
Low RDS(on) High Current Capability 100% Avalanche Tested These are Pb-Free Devices
V(BR)DSS Unit V V A 100 V
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ID MAX (Note 1) 72 A
MAXIMUM RATINGS (TJ = 25C Unless otherwise specified)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Continuous Drain Current RqJC Power Dissipation RqJC Pulsed Drain Current Steady State Steady State TC = 25C TC = 100C TC = 25C PD IDM TJ, Tstg IS EAS Symbol VDSS VGS ID Value 100 $20 72 51 188 285 -55 to +175 72 470 W A C A mJ
RDS(ON) MAX 14 mW @ 10 V N-Channel D
G S 4 4 1 2 3 TO-220AB CASE 221A STYLE 5 3 D2PAK CASE 418B STYLE 2
tp = 10 ms
Operating Junction and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 56 A, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8 from Case for 10 Seconds
TL
260
C 1
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Case (Drain) Steady State Junction-to-Ambient (Note 1) Symbol RqJC RqJA Max 0.8 33 Unit C/W
2
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [2 oz] including traces).
4 Drain
MARKING DIAGRAM & PIN ASSIGNMENT
4 Drain
NTP 6411ANG AYWW 1 Gate 2 Drain 3 Source 1 Gate
NTB 6411ANG AYWW 2 Drain 3 Source
6411AN = Specific Device Code G = Pb-Free Device A = Assembly Location Y = Year WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.
(c) Semiconductor Components Industries, LLC, 2009
October, 2009 - Rev. 0
1
Publication Order Number: NTB6411AN/D
NTB6411AN, NTP6411AN
ELECTRICAL CHARACTERISTICS (TJ = 25C Unless otherwise specified)
Characteristics OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS(th) VGS(th)/TJ RDS(on) gFS Ciss Coss Crss QG(TOT) QG(TH) QGS QGD VGP RG td(on) tr td(off) tf VSD trr ta tb QRR VGS = 0 V, IS = 72 A, dIS/dt = 100 A/ms IS = 72 A TJ = 25C TJ = 125C Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VGS = 10 V, VDD = 80 V, ID = 72 A, RG = 6.2 W VGS = 10 V, VDS = 80 V, ID = 72 A VDS = 25 V, VGS = 0 V, f = 1 MHz VGS = 10 V, ID = 72 A VDS = 5 V, ID = 10 A VGS = 0 V, VDS = 100 V TJ = 25C TJ = 125C VGS = 0 V, ID = 250 mA 100 113 1.0 100 $100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit
Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On-Resistance Forward Transconductance CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Plateau Voltage Gate Resistance
VDS = 0 V, VGS = $20 V VGS = VDS, ID = 250 mA 2.0 8.6 12.7 24
4.0
V mV/C
14
mW S
3700 550 200 100 4.0 16 47 5.2 3.1
pF
nC
V W ns
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage 0.92 0.86 94 64 30 330 nC ns 1.3 V 16 144 107 157
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures.
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2
NTB6411AN, NTP6411AN
160 140 ID, DRAIN CURRENT (A) 120 100 80 60 40 20 0 0 1 2 3 5.0 V VGS = 4.4 V 4 5 6.0 V 5.6 V TJ = 25C 160 10 V 7.5 V 6.5 V ID, DRAIN CURRENT (A) 140 120 100 80 60 40 20 0 2 TJ = 125C TJ = -55C 3 4 5 6 7 VGS, GATE-TO-SOURCE VOLTAGE (V) 8 TJ = 25C VDS w 10 V
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.04
Figure 2. Transfer Characteristics
0.035
ID = 72 A TJ = 25C
VGS = 10 V 0.03 RDS(on)
TJ = 175C TJ = 125C
0.025
0.02 TJ = 25C 0.01 TJ = -55C
0.015
0.005
5
6
7
8
9
10
0
10
20
30
40
50
60
70
80
VGS, GATE-TO-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On-Region versus Gate Voltage
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 3 2.5 2 1.5 1 0.5 -50 1000 100000
Figure 4. On-Resistance versus Drain Current and Temperature
VGS = 0 V
ID = 72 A VGS = 10 V
IDSS, LEAKAGE (nA)
10000
TJ = 150C TJ = 125C
-25
0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C)
150
175
10
20 30 40 50 60 70 80 90 100 VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current versus Voltage
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3
NTB6411AN, NTP6411AN
VGS, GATE-TO-SOURCE VOLTAGE (V) TJ = 25C VGS = 0 V VDS, DRAIN-TO-SOURCE VOLTAGE (V) 8000 7000 C, CAPACITANCE (pF) 6000 5000 4000 3000 2000 1000 0 Crss 0 Coss 10 20 30 40 50 60 70 80 90 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Ciss 10 8 VDS 6 4 2 0 Qgs Qgd VGS 60 40 20 0 100 QT 100 80
VDS = 80 V ID = 72 A TJ = 25C 0 20 40 60 80 Qg, TOTAL GATE CHARGE (nC)
100
Figure 7. Capacitance Variation
1000 VDS = 80 V ID = 72 A VGS = 10 V
Figure 8. Gate-to-Source Voltage and Drain-to-Source Voltage versus Total Charge
80 70 IS, SOURCE CURRENT (A) TJ = 25C VGS = 0 V
tf td(off) td(on)
60 50 40 30 20 10 0 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (V) 1.0
t, TIME (ns)
100 tr
10
1
1
10 RG, GATE RESISTANCE (W)
100
Figure 9. Resistive Switching Time Variation versus Gate Resistance
1000 AVALANCHE ENERGY (mJ) 500
Figure 10. Diode Forward Voltage versus Current
ID = 56 A
ID, DRAIN CURRENT (A)
100
10 ms 100 ms
400 300 200 100 0 25
10
1 ms 10 ms dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 VGS = 10 V SINGLE PULSE TC = 25C
1
0.1
10 100 VDS, DRAIN-TO-SOURCE VOLTAGE (V)
1000
50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE
175
Figure 11. Maximum Rated Forward Biased Safe Operating Area
Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature
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4
NTB6411AN, NTP6411AN
1 D = 0.5 0.2 0.1 R(t) (C/W) 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE
0.001 0.000001
0.00001
0.0001
0.001
0.01 0.1 t, PULSE TIME (s)
1
10
100
1000
Figure 13. Thermal Response ORDERING INFORMATION
Device NTB6411ANG NTB6411ANT4G NTP6411ANG Package D2PAK (Pb-Free) D2PAK (Pb-Free) TO-220 (Pb-Free) Shipping 50 Units / Rail 800 / Tape & Reel 50 Units / Rail
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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5
NTB6411AN, NTP6411AN
PACKAGE DIMENSIONS
D2PAK 3 CASE 418B-04 ISSUE K
C E -B-
4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. DIM A B C D E F G H J K L M N P R S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40
V W
1
2
3
S
A
-T-
SEATING PLANE
K G D 3 PL 0.13 (0.005) H
M
J
W
TB
M
VARIABLE CONFIGURATION ZONE L M
R
N U L
P L M
STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN
M
F VIEW W-W 1
F VIEW W-W 2
F VIEW W-W 3
SOLDERING FOOTPRINT*
10.49
8.38 16.155
3.504 1.016 5.080 PITCH
DIMENSIONS: MILLIMETERS 2X
2X
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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6
NTB6411AN, NTP6411AN
PACKAGE DIMENSIONS
TO-220 CASE 221A-09 ISSUE AF
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04
-T- B
4
SEATING PLANE
F
T
C S
Q
123
A U K
H Z L V G D N
R J
STYLE 5: PIN 1. 2. 3. 4.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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NTB6411AN/D

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